3EZ9.1D10 спецификации: 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-10% tolerance.

Аналогичные 3EZ9.1D10

3EZ9.1D
- 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-20% tolerance.
3EZ9.1D1
- 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-1% tolerance.
3EZ9.1D10
- 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-10% tolerance.
3EZ9.1D10
- 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-10% tolerance.
3EZ9.1D2
- 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-2% tolerance.
3EZ9.1D4
- 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-4% tolerance.
3EZ91D
- 3 W, silicon zener diode. Nominal voltage 91 V, current 8.2 mA, +-20% tolerance.
3EZ91D1
- 3 W, silicon zener diode. Nominal voltage 91 V, current 8.2 mA, +-1% tolerance.

3EZ9.1D10 Datasheet и спецификация

Производитель : JGD

Упаковка :

Pins : 2

Темп. диапазон : Минимум -65 °C | Макс 175 °C

Размер : 160 KB

Заявка : 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-10% tolerance.