3EZ6.8D10 спецификации: 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-10% tolerance.

Аналогичные 3EZ6.8D10

3EZ6.2D
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-20% tolerance.
3EZ6.2D1
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-1% tolerance.
3EZ6.2D10
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-10% tolerance.
3EZ6.2D2
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-2% tolerance.
3EZ6.2D3
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-3% tolerance.
3EZ6.2D4
- "3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-4% tolerance."
3EZ6.2D5
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-5% tolerance.
3EZ6.8D
- 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-20% tolerance.

3EZ6.8D10 Datasheet и спецификация

Производитель : JGD

Упаковка :

Pins : 2

Темп. диапазон : Минимум -65 °C | Макс 175 °C

Размер : 160 KB

Заявка : 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-10% tolerance.