1N747D спецификации: 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-1% tolerance.

Аналогичные 1N747D

1N746
- 500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. +-10% standard tolerance.
1N746C
- 500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. +-2% tolerance.
1N746D
- 500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. +-1% tolerance.
1N747
- 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-10% standard tolerance.
1N747A
- 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-5% tolerance.
1N747C
- 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-2% tolerance.
1N747D
- 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-1% tolerance.
1N748
- 500mW, silicon zener diode. Zener voltage 3.9 V. Test current 20 mA. +-10% standard tolerance.

1N747D Datasheet и спецификация

Производитель : JGD

Упаковка : DO-35

Pins : 2

Темп. диапазон : Минимум -55 °C | Макс 175 °C

Размер : 218 KB

Заявка : 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-1% tolerance.