1N5951B спецификации: 1.5 W, silicon zener diode. Zener voltage 120 V. Test current 3.1 mA. +-5% tolerance.

Аналогичные 1N5951B

1N5913
- 1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-20% tolerance.
1N5913A
- 1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-10% tolerance.
1N5913B
- 1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-5% tolerance.
1N5913C
- 1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-2% tolerance.
1N5913D
- 1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-1% tolerance.
1N5914
- 1.5 W, silicon zener diode. Zener voltage 3.6V. Test current 104.2 mA. +-20% tolerance.
1N5914A
- 1.5 W, silicon zener diode. Zener voltage 3.6V. Test current 104.2 mA. +-10% tolerance.
1N5914B
- 1.5 W, silicon zener diode. Zener voltage 3.6V. Test current 104.2 mA. +-5% tolerance.

1N5951B Datasheet и спецификация

Производитель : JGD

Упаковка :

Pins : 2

Темп. диапазон : Минимум -55 °C | Макс 175 °C

Размер : 172 KB

Заявка : 1.5 W, silicon zener diode. Zener voltage 120 V. Test current 3.1 mA. +-5% tolerance.