Путь:OKDatasheet > Полупроводниковые Datasheet > Intersil Datasheet > FSYC163D
FSYC163D спецификации: Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Аналогичные FSYC163D
- FSYC055D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC055R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC160R
- Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
- FSYC163D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC163D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC163R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC260D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC260R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC163D Datasheet и спецификация
Производитель : Intersil
Упаковка :
Pins : 0
Темп. диапазон : Минимум 0 °C | Макс 0 °C
Размер : 67 KB
Заявка : Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC163D Скачать PDF