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FSPYE234F спецификации: Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Аналогичные FSPYE234F
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- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSPYE234F
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSPYE234R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE234F Datasheet и спецификация
Производитель : Intersil
Упаковка :
Pins : 0
Темп. диапазон : Минимум 0 °C | Макс 0 °C
Размер : 86 KB
Заявка : Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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