Путь:OKDatasheet > Полупроводниковые Datasheet > IR Datasheet > IRFS17N20D
IRFS17N20D спецификации: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.17 Ohm, ID = 16A
Аналогичные IRFS17N20D
- IRFS17N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.17 Ohm, ID = 16A
- IRFS23N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
- IRFS23N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
- IRFS23N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A
- IRFS33N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A
- IRFS38N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.054 Ohm, ID = 44A
- IRFS4710
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.014 Ohm, ID = 75A
- IRFS59N10D
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFS17N20D Datasheet и спецификация
Производитель : IR
Упаковка : DDPak
Pins : 3
Темп. диапазон : Минимум -55 °C | Макс 150 °C
Размер : 213 KB
Заявка : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.17 Ohm, ID = 16A
IRFS17N20D Скачать PDF