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IRFL1006 спецификации: HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.22 Ohm, ID = 1.6A
Аналогичные IRFL1006
- IRFL014
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.20 Ohm, ID = 2.7A
- IRFL014
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.20 Ohm, ID = 2.7A
- IRFL014N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.16 Ohm, ID = 1.9A
- IRFL024N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.075 Ohm, ID = 2.8A
- IRFL1006
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.22 Ohm, ID = 1.6A
- IRFL110
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 1.5A
- IRFL210
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 0.96A
- IRFL214
- HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 0.79A
IRFL1006 Datasheet и спецификация
Производитель : IR
Упаковка : SOT-223
Pins : 3
Темп. диапазон : Минимум -55 °C | Макс 150 °C
Размер : 139 KB
Заявка : HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.22 Ohm, ID = 1.6A
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