IRF9Z24NS спецификации: HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A

Аналогичные IRF9Z24NS

IRF9130
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A
IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A

IRF9Z24NS Datasheet и спецификация

Производитель : IR

Упаковка : DDPak

Pins : 3

Темп. диапазон : Минимум -55 °C | Макс 175 °C

Размер : 184 KB

Заявка : HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A