IRF7807 спецификации: HEXFET chip-set for DC-DC converters. VDSS = 30V. RDS(on) = 25mOhm.

Аналогичные IRF7807

IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF720
- N-channel HEXFET, 400V, 3.3A
IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
IRF721
- N-channel HEXFET, 350V, 3.3A
IRF722
- N-channel HEXFET, 400V, 2.8A

IRF7807 Datasheet и спецификация

Производитель : IR

Упаковка : SO

Pins : 8

Темп. диапазон : Минимум -55 °C | Макс 150 °C

Размер : 262 KB

Заявка : HEXFET chip-set for DC-DC converters. VDSS = 30V. RDS(on) = 25mOhm.