Путь:okDatasheet > Полупроводниковые Datasheet > IR Datasheet > IR-56
12S15PV IRG4PH50K SD203N08S20PC SD103R16S10MV 47L5 SD200N20PSC ST330S14M0 ST2600C22R1L SD203N16S15PSV SD253R08S20PSV SD103R25S10PSC IRG4BC30S 20ETS12 IRFL014 ST203S12MFJ1L ST330C12L0 SD400R16PBV SD203N16S15PBV ST3230C16R2 IRGBC20S SD300N28PC ST2600C20R3 SD203R20S15MC PVT422P-T PV
Name component | Производитель | Заявка |
---|---|---|
SD103N16S10MV | IR | Fast recovery diode |
SD153R12S15PV | IR | Fast recovery diode |
IRG4PH50K | IR | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.77V @ VGE = 15V, IC = 24A |
SD203N08S20PC | IR | Fast recovery diode |
SD103R16S10MV | IR | Fast recovery diode |
47L5 | IR | Standard recovery diode |
SD200N20PSC | IR | Standard recovery diode |
ST330S14M0 | IR | Phase control thyristor |
ST2600C22R1L | IR | Phase control thyristor |
SD203N16S15PSV | IR | Fast recovery diode |
SD253R08S20PSV | IR | Fast recovery diode |
SD103R25S10PSC | IR | Fast recovery diode |
IRG4BC30S | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A |
20ETS12 | IR | Surface mountable input rectifier diode |
IRFL014 | IR | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.20 Ohm, ID = 2.7A |
ST203S12MFJ1L | IR | Inverter grade thyristor |
ST330C12L0 | IR | Phase control thyristor |
SD400R16PBV | IR | Standard recovery diode |
SD203N16S15PBV | IR | Fast recovery diode |
ST3230C16R2 | IR | Phase control thyristor |
IRGBC20S | IR | Insulated gate bipolar transistor |
SD300N28PC | IR | Standard recovery diode |
ST2600C20R3 | IR | Phase control thyristor |
SD203R20S15MC | IR | Fast recovery diode |
PVT422P-T | IR | HEXFET power MOSFET photovoltaic relay |
PVG612S | IR | HEXFET power mosfet photovoltaic relay |
SD453N12S30MSC | IR | Fast recovery diode |
SD400N16MSV | IR | Standard recovery diode |
300UR160PD | IR | Standard recovery diode |
SD600R16PC | IR | Standard recovery diode |