P6606-110 спецификации: Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements

Аналогичные P6606-110

P6606-110
- Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
P6606-210
- Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
P6606-310
- Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
P6606-320
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P6606-110 Datasheet и спецификация

Производитель : Hamamatsu

Упаковка : TO-8

Pins : 6

Темп. диапазон : Минимум -40 °C | Макс 60 °C

Размер : 170 KB

Заявка : Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements