Путь:OKDatasheet > Полупроводниковые Datasheet > HYNIX Datasheet > HY51V17403HGLJ-6
HY51V17403HGLJ-6 спецификации: 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
Аналогичные HY51V17403HGLJ-6
- HY51V17403HGJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGLJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLJ-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGLT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
- HY51V18163HGJ-7
- Dynamic RAM organized 1,048,576 words x 16bit, 70ns
HY51V17403HGLJ-6 Datasheet и спецификация
Производитель : HYNIX
Упаковка : SOJ
Pins : 24
Темп. диапазон : Минимум 0 °C | Макс 70 °C
Размер : 105 KB
Заявка : 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
HY51V17403HGLJ-6 Скачать PDF