NDB603AL спецификации: N-channel logic level enhancement mode field effect transistor, 30V, 25A

Аналогичные NDB603AL

NDB6020P
- P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDB6030L
- Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 75 W Transistor polarity N Channel Current Id cont. 52 A Voltage Vgs th max. 3 V (D2-Pak) Voltage Vds max 30 V
NDB603AL
- N-channel logic level enhancement mode field effect transistor, 30V, 25A
NDB6051
- Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 100 W Transistor polarity N Channel Current Id cont. 48 A Voltage Vgs th max. 4 V (D2-Pak) Voltage Vds max 50 V
NDB6060L
- Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 100 W Transistor polarity N Channel Current Id cont. 48 A Voltage Vgs th max. 2 V (D2-Pak) Voltage Vds max 60 V

NDB603AL Datasheet и спецификация

Производитель : Fairchild

Упаковка : TO-263AB

Pins : 3

Темп. диапазон : Минимум -65 °C | Макс 175 °C

Размер : 71 KB

Заявка : N-channel logic level enhancement mode field effect transistor, 30V, 25A