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EC-10N16 спецификации: N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
Аналогичные EC-10N16
- EC-10P16
- P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
- EC-10N16
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
- EC-10N20
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
- EC-10N20
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
- EC-10P20
- P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
- EC-10N16
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
- EC-10N16
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
- EC-10P16
- P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10N16 Datasheet и спецификация
Производитель : EXICON
Упаковка : TO3P
Pins : 3
Темп. диапазон : Минимум -55 °C | Макс 150 °C
Размер : 249 KB
Заявка : N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
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