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Аналогичные W4NRD8C-U000

  • W4NRD8C-U000
    • Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
  • W4NRE0X-0D00
    • Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NRD8C-U000 Datasheet и спецификация

Производитель : Cree 

Упаковка :  

Pins : 0 

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 306 KB

Заявка : Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

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