1N4747 спецификации: 1W silicon planar zener diode. Nominal zener voltage Vz = 20 V. Test current Izt = 12.5 mA.

Аналогичные 1N4747

1N4733
- 1W silicon planar zener diode. Nominal zener voltage Vz = 5.1 V. Test current Izt = 49 mA.
1N4747
- 1W silicon planar zener diode. Nominal zener voltage Vz = 20 V. Test current Izt = 12.5 mA.
1N4754
- 1W silicon planar zener diode. Nominal zener voltage Vz = 39 V. Test current Izt = 6.5 mA.
1N4728
- 1W silicon planar zener diode. Nominal zener voltage Vz = 3.3 V. Test current Izt = 76 mA.
1N4755
- 1W silicon planar zener diode. Nominal zener voltage Vz = 43 V. Test current Izt = 6.0 mA.
1N4739
- 1W silicon planar zener diode. Nominal zener voltage Vz = 9.1 V. Test current Izt = 28 mA.
1N4762
- 1W silicon planar zener diode. Nominal zener voltage Vz = 82 V. Test current Izt = 3.0 mA.
1N4758
- 1W silicon planar zener diode. Nominal zener voltage Vz = 56 V. Test current Izt = 4.5 mA.

1N4747 Datasheet и спецификация

Производитель : Chenyi Electronics

Упаковка :

Pins : 2

Темп. диапазон : Минимум -65 °C | Макс 175 °C

Размер : 60 KB

Заявка : 1W silicon planar zener diode. Nominal zener voltage Vz = 20 V. Test current Izt = 12.5 mA.