Путь:OKDatasheet > Полупроводниковые Datasheet > Austin Semiconductor Datasheet > AS5C512K8DJ-25E/IT
AS5C512K8DJ-25E/IT спецификации: 512K x 8 SRAM - high speed with revolutionary pinout
Аналогичные AS5C512K8DJ-25E/IT
- AS5C4009LLECJ-70/IT
- 512K x 8 SRAM - ultra low power
- AS5C512K8ECJ-30L/XT
- 512K x 8 SRAM - high speed with revolutionary pinout
- AS5C512K8EC-15L/XT
- 512K x 8 SRAM - high speed with revolutionary pinout
- AS5C4008EC-20L/IT
- 512K x 8 SRAM memory array
- AS5C512K8DJ-20E/883C
- 512K x 8 SRAM - high speed with revolutionary pinout
- AS5C512K8DJ-25E/IT
- 512K x 8 SRAM - high speed with revolutionary pinout
- AS5C512K8ECJ-25L/IT
- 512K x 8 SRAM - high speed with revolutionary pinout
- AS5C4008ECA-25L/883C
- 512K x 8 SRAM memory array
AS5C512K8DJ-25E/IT Datasheet и спецификация
Производитель : Austin Semiconductor
Упаковка : SOJ
Pins : 36
Темп. диапазон : Минимум -40 °C | Макс 85 °C
Размер : 457 KB
Заявка : 512K x 8 SRAM - high speed with revolutionary pinout
AS5C512K8DJ-25E/IT Скачать PDF