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Аналогичные STH60N10

  • STH60N10
    • Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C
  • STH60N10FI
    • N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
  • STH6N100
    • N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
  • STH6N100FI
    • N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
  • STH6NA80FI
    • N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS

STH60N10 Datasheet и спецификация

Производитель : ST Microelectronics 

Упаковка : TO-218 

Pins : 0 

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 270 KB

Заявка : Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C 

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