Путь:OKDatasheet > Полупроводниковые Datasheet > ST Microelectronics Datasheet > MJD122-1
MJD122-1 спецификации: "NPN darlington transistor for high DC current gain, 100V, 5A"
Аналогичные MJD122-1
- MJD112
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD117
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122-1
- "NPN darlington transistor for high DC current gain, 100V, 5A"
- MJD122T4
- NPN darlington transistor for high DC current gain, 100V, 5A
- MJD127-1
- PNP darlington transistor for high DC current gain, 100V, 5A
- MJD127T4
- PNP darlington transistor for high DC current gain, 100V, 5A
MJD122-1 Datasheet и спецификация
Производитель : ST Microelectronics
Упаковка : TO-252
Pins : 3
Темп. диапазон : Минимум -65 °C | Макс 150 °C
Размер : 100 KB
Заявка : "NPN darlington transistor for high DC current gain, 100V, 5A"
MJD122-1 Скачать PDF