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B2EZ33 15KP170A PG101RS P4SMAJ7.5A 3.0SMCJ43A 1SMB3EZ110 1SMB5947 P4KE120A P6SMBJ120 SB620 UF300 P4SMAJ8.0C ER1003FCT 1N5933B P6KE30C 3.0SMCJ110A P6KE130 PG5406 ER1002CT 3.0SMCJ16CA SB3060CT GBU8K CP1502 P4KE170C 3EZ39 1N5351B SA8.0 P4SMAJ58C
Name component | Производитель | Заявка |
---|---|---|
SB2080CT | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 90degC 20.0 A. |
SD8100S | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 85degC 8.0 A. |
1SMB2EZ33 | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 33.0 V. Test current Izt = 15.1 mA |
15KP170A | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. |
PG101RS | PanJit | Glass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 100 A. Max average forward rectified current 9.5mm lead length at 55degC 1.0 A. |
P4SMAJ7.5A | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 7.5 V. Breakdown voltage(min/max) 8.33/9.58 V. Test current 1.0 mA. Reverse leakage 100 uA. Max clamp voltage 12.9 V. Peak pulse current 31.0 A. |
3.0SMCJ43A | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 43 V. Vbr(max/min) = 47.8/54.9 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 69.4 V @ Ipp = 43.2 A. |
1SMB3EZ110 | PanJit | Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 110 V. Test current Izt = 6.8 mA |
1SMB5947 | PanJit | Surface mount silicon zener diode. Power 1.5 Watts. Nominal zener voltage Vz = 82 V. Test current Izt = 4.6 mA |
P4KE120A | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 102.00V, Vbr(min/max) = 114.00/126.00V, It = 1mA. |
P6SMBJ120 | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V. It = 1.0 mA. Ir = 5 uA. Vc = 214 V. Ipp = 2.8 A. |
SB620 | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Ta = 75degC 6 A. |
UF300 | PanJit | Ultrafast switching rectifier. Peak reverse voltage 50 V. Average forward current 3.0 A. |
P4SMAJ8.0C | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 8.0 V. Breakdown voltage(min/max) 8.89/11.30 V. Test current 1.0 mA. Reverse leakage 100 uA. Max clamp voltage 15.0 V. Peak pulse current 26.5 A. |
ER1003FCT | PanJit | Isolation superfast recovery rectifier. Max recurrent peak reverse voltage 300V. Max average forward rectified current (Tc=100degC) 10.0A. |
1N5933B | PanJit | Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 22V. Test current Izt = 17 mA. |
P6KE30C | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 24.30V, Vbr(min/max) = 27.00/33.00V, It = 1 mA. |
3.0SMCJ110A | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It. Ir = 5 uA @ Vrwm. Vc = 177 V @ Ipp = 16.8 A. |
P6KE130 | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 105.20V, Vbr(min/max) = 117.00/143.00V, It = 1 mA. |
PG5406 | PanJit | Glass passivated junction plastic rectifier. Max recurrent peak reverse voltage 600 A. Max average forward rectified current 0.375inches lead length at Ta = 55degC 3.0 A.. |
ER1002CT | PanJit | Superfast recovery rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified current (Tc=100degC) 10.0A. |
3.0SMCJ16CA | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 16 V. Vbr(max/min) = 17.8/20.5 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 26.0 V @ Ipp = 115.4 A. |
SB3060CT | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 60.0 V. Max average forward rectified current at Tc = 90degC 30 A. |
GBU8K | PanJit | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified output current at Tc=100degC 8.0 A, at Ta=40degC 6.0 A. |
CP1502 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current for resistive load at Tc=55degC 15A. |
P4KE170C | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 138.00V, Vbr(min/max) = 153.00/187.00V, It = 1 mA. |
3EZ39 | PanJit | Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 39 V. Izt = 19 mA. |
1N5351B | PanJit | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA |
SA8.0 | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 8.00V, Vbr(min/max) = 8.89/11.30V, It = 1 mA. |
P4SMAJ58C | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 58 V. Breakdown voltage(min/max) 64.4/81.6 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 103 V. Peak pulse current 3.9 A. |