Путь:okDatasheet > Полупроводниковые Datasheet > NTE Electronic Datasheet > NTE Electronic-77
172 NTE2527 NTE191 NTE5230A NTE1792 NTE2011 NTE2590 NTE363 NTE581 NTE2401 NTE1682 NTE4915 NTE1650 NTE5545 NTE5602 NTE6031 NTE1858 NTE2334 NTE1235 NTE2015 NTE1805 NTE175 NTE5021A NTE70 NTE5304 NTE5652 NTE1214 2V025
Name component | Производитель | Заявка |
---|---|---|
NTE2537 | NTE Electronic | Silicon complementary PNP transistor. High current switch. |
NTE1795 | NTE Electronic | Integrated circuit. RMS level sensor for dbx noise reduction system. |
NTE1172 | NTE Electronic | Integrated circuit. Phase-frequency detector. |
NTE2527 | NTE Electronic | Silicon complementary PNP transistor. High current switch. |
NTE191 | NTE Electronic | Silicon complementary NPN transistor. High voltage video amplifier. |
NTE5230A | NTE Electronic | Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 180V. Zener test current Izt = 14mA. |
NTE1792 | NTE Electronic | Integrated circuit. Dual attenuator. |
NTE2011 | NTE Electronic | Integrated circuit. 7-channel darlington array/driver. |
NTE2590 | NTE Electronic | Silicon NPN transistor. High voltage amp/switch. |
NTE363 | NTE Electronic | Silicon NPN transistor. RF power output, Po = 4W. |
NTE581 | NTE Electronic | General purpose silicon rectifier. Fast recovery. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max average forward rectified current 8A. |
NTE2401 | NTE Electronic | Silicon PNP transistor. RF stages in FM front ends. |
NTE1682 | NTE Electronic | Integrated circuit. Preamplifier circuit for remote control signal receivers. |
NTE4915 | NTE Electronic | Surge clamping, transient overvoltage suppressor, bidirectional. VR = 10.20V max reverse stand off voltage. |
NTE1650 | NTE Electronic | Integrated circuit. Color TV luminance-chroma system w/auto flesh. |
NTE5545 | NTE Electronic | Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current 35A. |
NTE5602 | NTE Electronic | TRIAC, 4 Amp. Peak repetitive off-state voltage Vdrm = 100V. |
NTE6031 | NTE Electronic | Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 300V. Max average forward current 60A. |
NTE1858 | NTE Electronic | Integrated circuit. Vrtical deflection circuit. |
NTE2334 | NTE Electronic | Silicon NPN transistor. Darlington driver, w/internal damper and zener diode. |
NTE1235 | NTE Electronic | Integrated circuit. Squelch amp. |
NTE2015 | NTE Electronic | Integrated circuit. 7-channel darlington array/driver. |
NTE1805 | NTE Electronic | Integrated circuit. Recording video signal processing circuit. |
NTE175 | NTE Electronic | Silicon complementary NPN transistor. High voltage, medium power switch. Compl to NTE38. |
NTE5021A | NTE Electronic | Zener diode, 1/2 watt, + - 5 % tolerance. Nominal zener voltage Vz = 12V, Zener test current Izt = 20mA. |
NTE70 | NTE Electronic | Silicon NPN transistor. High voltage power amplifier, switch. |
NTE5304 | NTE Electronic | Silicon bridge rectifier, 1.5 A. Maximum recurrent peak reverse voltage Vrrm = 400V. |
NTE5652 | NTE Electronic | TRIAC, 2.5A. Repetitive peak off-state voltage Vdrm = 400V. RMS on-state current 3A. |
NTE1214 | NTE Electronic | Integrated circuit. AM tuner system. |
2V025 | NTE Electronic | Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 39 V @ 1mA DC test current. |