Путь:okDatasheet > Полупроводниковые Datasheet > MDE Semiconductor Datasheet > MDE Semiconductor-8
5KP90A SMLJ14 SMLJ15A 15KW30A SMCJ11 P4KE10 SMDJ7.5 SA20A 15KW60 5KP180 MDE-10D331K P6KE18 SMDJ9.0A MAX40-13.0CA 30KW180A MDE-7D101M MAX20-20.0CA P6KE22 SMCJ6.0 SMDJ13 MAX20-9.0C ICTE-8C SMBJ43A SMAJ5.0 SMLJ8.5 5KP12A SMCJ54 3KP33
| Name component | Производитель | Заявка |
|---|---|---|
| MDE-14D390K | MDE Semiconductor | 39V; max peak current2000A; metal oxide varistor. Standard D series 14mm disc |
| P6KE13A | MDE Semiconductor | 11.10V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 5KP90A | MDE Semiconductor | 90.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMLJ14 | MDE Semiconductor | 14.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMLJ15A | MDE Semiconductor | 15.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 15KW30A | MDE Semiconductor | 30.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMCJ11 | MDE Semiconductor | 11.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P4KE10 | MDE Semiconductor | 8.10V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ7.5 | MDE Semiconductor | 7.50V; 10.20mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SA20A | MDE Semiconductor | 20.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KW60 | MDE Semiconductor | 60.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 5KP180 | MDE Semiconductor | 180.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MDE-10D331K | MDE Semiconductor | 330V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
| P6KE18 | MDE Semiconductor | 14.50V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ9.0A | MDE Semiconductor | 9.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX40-13.0CA | MDE Semiconductor | 13.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 30KW180A | MDE Semiconductor | 180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MDE-7D101M | MDE Semiconductor | 100V; max peak current1750A; metal oxide varistor. Standard D series 7mm disc |
| MAX20-20.0CA | MDE Semiconductor | 20.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| P6KE22 | MDE Semiconductor | 17.80V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMCJ6.0 | MDE Semiconductor | 6.00V; 10mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMDJ13 | MDE Semiconductor | 13.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX20-9.0C | MDE Semiconductor | 9.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| ICTE-8C | MDE Semiconductor | 8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| SMBJ43A | MDE Semiconductor | 43.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMAJ5.0 | MDE Semiconductor | 5.00V; 10mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMLJ8.5 | MDE Semiconductor | 8.50V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 5KP12A | MDE Semiconductor | 12.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMCJ54 | MDE Semiconductor | 54.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 3KP33 | MDE Semiconductor | 33.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |