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1.5KE200A P4KE24 SMDJ30 SMLJ45A SMLJ6.5 MDE-32D681K P4KE51 P6KE47 1.5KE12A P4KE15 MDE-10D560K 5KP14A SA90 5KP120A MAX40-40.0C 20KW30 MAX40-150.0CA 15KW260A P6KE56 MAX20-75.0CA MAX20-5.0C 30KW216A 3KP16A SA7.5 P6KE7.5A 15KW110 MDE-53D102K 15KP26A
| Name component | Производитель | Заявка |
|---|---|---|
| MDE-14D301K | MDE Semiconductor | 300V; max peak current6000A; metal oxide varistor. Standard D series 14mm disc |
| SMAJ60A | MDE Semiconductor | 60.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE200A | MDE Semiconductor | 171.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| P4KE24 | MDE Semiconductor | 19.40V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ30 | MDE Semiconductor | 30.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMLJ45A | MDE Semiconductor | 45.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMLJ6.5 | MDE Semiconductor | 6.50V; 10mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-32D681K | MDE Semiconductor | 680V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc |
| P4KE51 | MDE Semiconductor | 41.30V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P6KE47 | MDE Semiconductor | 38.10V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE12A | MDE Semiconductor | 10.20V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| P4KE15 | MDE Semiconductor | 12.10V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-10D560K | MDE Semiconductor | 56V; max peak current1000A; metal oxide varistor. Standard D series 10mm disc |
| 5KP14A | MDE Semiconductor | 14.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SA90 | MDE Semiconductor | 90.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 5KP120A | MDE Semiconductor | 120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MAX40-40.0C | MDE Semiconductor | 40.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 20KW30 | MDE Semiconductor | 30.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MAX40-150.0CA | MDE Semiconductor | 150.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KW260A | MDE Semiconductor | 260.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| P6KE56 | MDE Semiconductor | 45.40V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX20-75.0CA | MDE Semiconductor | 75.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX20-5.0C | MDE Semiconductor | 5.00V; 50mA ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 30KW216A | MDE Semiconductor | 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 3KP16A | MDE Semiconductor | 16.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SA7.5 | MDE Semiconductor | 7.50V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P6KE7.5A | MDE Semiconductor | 6.40V; 10mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KW110 | MDE Semiconductor | 110.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-53D102K | MDE Semiconductor | 1000V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc |
| 15KP26A | MDE Semiconductor | 26.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |