| Name component | Производитель | Заявка |
|---|
| SF13 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 150 V. Max average forward current 1.0 A. |
| UF4007 | JGD | Ultra fast rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 1.0 A. |
| SMAJ22C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 22 V. Bidirectional. |
| 3EZ51D5 | JGD | 3 W, silicon zener diode. Nominal voltage 51 V, current 15 mA, +-5% tolerance. |
| SMAJ24 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 24 V. |
| SMAJ54A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 54 V. |
| 1A6G | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 800V. |
| F1A3 | JGD | 1.0 A fast recovery rectifier. Max recurrent peak reverse voltage 200 V. |
| HER204 | JGD | 2.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 300V. |
| P4KE200CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 200 V. Bidirectional. |
| MR856 | JGD | 3.0A, fast recovery rectifier. Max recurrent peak reverse voltage 600V. |
| ZMM55-A6V2 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 5.8-6.6 V. Test current 5 mA. +-1% tolerance. |
| SMBJ5950A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 110 V. Test current 3.4 mA. +-10% tolerance. |
| IN4942 | JGD | 1.0A, fast recovery rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V. |
| 3EZ68D5 | JGD | 3 W, silicon zener diode. Nominal voltage 68 V, current 11 mA, +-5% tolerance. |
| DF01G | JGD | Single phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 100 V. |
| SMAJ8.0A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.0 V. |
| SMBJ54CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 60.0 V (min), 66.3 V (max). Test current 1.0 mA. Bidirectional. |
| 1N4103D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 9.1V. 1% tolerance. |
| 1N964D | JGD | 0.5W, silicon zener diode. Zener voltage 13V. Test current 9.5mA. +-1% tolerance. |
| 1N962B | JGD | 0.5W, silicon zener diode. Zener voltage 11V. Test current 11.5mA. +-5% tolerance. |
| 3EZ51D4 | JGD | 3 W, silicon zener diode. Nominal voltage 51 V, current 15 mA, +-4% tolerance. |
| HER302G | JGD | 3.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 100V. |
| SMAJ45C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 45 V. Bidirectional. |
| 3EZ6.8D4 | JGD | 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-4% tolerance. |
| P4KE56 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 56 V. |
| SMBJ120C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 133 V (min), 163 V (max). Test current 1.0 mA. Bidirectional. |
| ZMM5253A | JGD | Surface mount zener diode. Nominal zener voltage 25 V. Test current 5.0 mA. +-3% tolerance. |
| ZMM5251C | JGD | Surface mount zener diode. Nominal zener voltage 22 V. Test current 5.6 mA. +-10% tolerance. |
| 1N5538C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-2% tolerance. |
