| Name component | Производитель | Заявка |
|---|
| IR2131S | IR | 3 high side and 3 low side driver |
| IRG4PC30FD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A |
| IRFB61N15D | IR | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.032 Ohm, ID = 60A |
| 307UR120P3 | IR | Standard recovery diode |
| SD703C20S30L | IR | Fast recovery diode |
| IRF7705 | IR | HEXFET power MOSFET. VDSS = -30V, RDS(on) = 18mOhm, ID = -8.0A @ VGS = -10V. RDS(on) = 30mOhm, ID = -6.0A @ VGS = -4.5V. |
| ST280CH04C1 | IR | Phase control thyristor |
| ST183S04PFN1 | IR | Inverter grade thyristor |
| IRF640L | IR | N-channel power MOSFET for fast switching applications, 200V, 18A |
| IRFU9110 | IR | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -3.1A |
| IRFL9014 | IR | HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -1.8A |
| ST2600C28R2L | IR | Phase control thyristor |
| 301UA160P3 | IR | Standard recovery diode |
| IRL2203N | IR | Power MOSFET, 30V, 116A |
| SD300R08PC | IR | Standard recovery diode |
| IR51HD224 | IR | Self-oscillating half-bridge |
| 300HFR120M | IR | Standard recovery diode |
| SD300N16PBV | IR | Standard recovery diode |
| 300HF120MS | IR | Standard recovery diode |
| ST180S12P2V | IR | Phase control thyristor |
| SD103N10S15MBC | IR | Fast recovery diode |
| IRSF3031L | IR | Fully protected power mosfet switch |
| SD103N10S10PBC | IR | Fast recovery diode |
| ST180S04P0 | IR | Phase control thyristor |
| JANTXV2N6762 | IR | HEXFET power mosfet |
| ST333S04PFM1 | IR | Inverter grade thyristor |
| IRHNA7460SE | IR | HEXFET transistor |
| 307U200P4 | IR | Standard recovery diode |
| 303UR120P3 | IR | Standard recovery diode |
| ST230C04C0 | IR | Phase control thyristor |
