Путь:okDatasheet > Полупроводниковые Datasheet > IR Datasheet > IR-132
JZ48 ST330C08L3 SD253N04S15PBV ST330S08M1L IRFL214 ST330S04P3L SD103R16S10PSV IRF140 307URA120P2 ST2600C26R2L SD453N12S30MTC SD203R16S10PSV SD253N14S20MBV SD253R12S20PV SD500R40MC SD153N16S10PSV SD153N12S15PBV ST733C04LHK1 SD453R12S20PSC SD150N25PC SD233R45S50PC 309URA200P5 IRF96
Name component | Производитель | Заявка |
---|---|---|
SD153N14S15PSV | IR | Fast recovery diode |
IRF5NJZ48 | IR | HEXFET power MOSFET surface mount. BVDSS = 55V, RDS(on) = 0.016 Ohm, ID = 22A |
ST330C08L3 | IR | Phase control thyristor |
SD253N04S15PBV | IR | Fast recovery diode |
ST330S08M1L | IR | Phase control thyristor |
IRFL214 | IR | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 0.79A |
ST330S04P3L | IR | Phase control thyristor |
SD103R16S10PSV | IR | Fast recovery diode |
IRF140 | IR | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. |
307URA120P2 | IR | Standard recovery diode |
ST2600C26R2L | IR | Phase control thyristor |
SD453N12S30MTC | IR | Fast recovery diode |
SD203R16S10PSV | IR | Fast recovery diode |
SD253N14S20MBV | IR | Fast recovery diode |
SD253R12S20PV | IR | Fast recovery diode |
SD500R40MC | IR | Standard recovery diode |
SD153N16S10PSV | IR | Fast recovery diode |
SD153N12S15PBV | IR | Fast recovery diode |
ST733C04LHK1 | IR | Inverter grade thyristor |
SD453R12S20PSC | IR | Fast recovery diode |
SD150N25PC | IR | Standard recovery diode |
SD233R45S50PC | IR | Fast recovery diode |
309URA200P5 | IR | Standard recovery diode |
IRF9640S | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.50 Ohm, ID = -11A |
ST380CH04C1L | IR | Phase control thyristor |
SD103N10S15MSC | IR | Fast recovery diode |
SD400N20PBC | IR | Standard recovery diode |
SD110OC25C | IR | Standard recovery diode |
ST330C12C2L | IR | Phase control thyristor |
300U120YPD | IR | Standard recovery diode |