Путь:okDatasheet > Полупроводниковые Datasheet > IR Datasheet > IR-102
N04MBC SD253N14S15PBV IRFPS37N50A JANTXV2N6796 IRU1050CD IRGBC30F IRU1010-18CP ST180S20M2 SD300N20PSC PVI5013RS-T IRG4BC15UD-S ST730C18L2L 305UR80P3 25TTS12STRL IRFP253 SD203R04S10PC 305UA160P4 ST203C10CHH3L IRFY240CM 309URA80P2 SD253N04S15PSV 303URA250P4 SD103R25S10MBC 45L120D S
| Name component | Производитель | Заявка |
|---|---|---|
| SD103N08S15MSC | IR | Fast recovery diode |
| SD400N04MBC | IR | Standard recovery diode |
| SD253N14S15PBV | IR | Fast recovery diode |
| IRFPS37N50A | IR | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.13 Ohm, ID = 36 A |
| JANTXV2N6796 | IR | HEXFET power mosfet |
| IRU1050CD | IR | 5A low dropout positive adjustable regulator |
| IRGBC30F | IR | Insulated gate bipolar transistor |
| IRU1010-18CP | IR | 1A low dropout positive fixed 1.8V regulator |
| ST180S20M2 | IR | Phase control thyristor |
| SD300N20PSC | IR | Standard recovery diode |
| PVI5013RS-T | IR | Photovoltaic isolator |
| IRG4BC15UD-S | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A |
| ST730C18L2L | IR | Phase control thyristor |
| 305UR80P3 | IR | Standard recovery diode |
| 25TTS12STRL | IR | Surface mountable phase control SCR |
| IRFP253 | IR | N-channel NEXFET, 150V, 27A |
| SD203R04S10PC | IR | Fast recovery diode |
| 305UA160P4 | IR | Standard recovery diode |
| ST203C10CHH3L | IR | Inverter grade thyristor |
| IRFY240CM | IR | HEXFET power mosfet |
| 309URA80P2 | IR | Standard recovery diode |
| SD253N04S15PSV | IR | Fast recovery diode |
| 303URA250P4 | IR | Standard recovery diode |
| SD103R25S10MBC | IR | Fast recovery diode |
| 45L120D | IR | Standard recovery diode |
| ST330C08L2L | IR | Phase control thyristor |
| SD153R10S15PV | IR | Fast recovery diode |
| CPU165MM | IR | IGBT SIP module |
| 307UR200P2 | IR | Standard recovery diode |
| ST2100C32R1 | IR | Phase control thyristor |